Study of base doping rate effect on parallel vertical junction silicon solar cell under magnetic field

Study of base doping rate effect on parallel vertical junction silicon solar cell under magnetic field

  IJETT-book-cover  International Journal of Engineering Trends and Technology (IJETT)          
  
© 2015 by IJETT Journal
Volume-19 Number-1
Year of Publication : 2015
Authors : Mohamed lemine OULD CHEIKH , Boureima SEIBOU, Mohamed Abderrahim Ould El Moujtaba , Khady FAYE, Mamadou WADE, Grégoire SISSOKO
DOI :  10.14445/22315381/IJETT-V19P210

Citation 

Mohamed lemine OULD CHEIKH , Boureima SEIBOU, Mohamed Abderrahim Ould El Moujtaba , Khady FAYE, Mamadou WADE, Grégoire SISSOKO "Study of base doping rate effect on parallel vertical junction silicon solar cell under magnetic field", International Journal of Engineering Trends and Technology (IJETT), V19(1),44-55 Jan 2015. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group

Abstract

In this work we suggest looking for influences of a constant magnetic field and the base doping rate on a parallel vertical junction silicon solar cell under multispectral illumination in static regime. A study on the coefficient and the length diffusion according to the magnetic field B and the doping rate Nb is made. The minority carriers density in the base was studied according to the depth of the base for various values of the base doping rate and the magnetic field. This study allows us to determine the influences of the doping rate and the magnetic field on the photocurrent density, the photovoltage, the space charge region capacitance.The study of these electrical parameters is done according to the concept of the junction surface recombination velocity of excess minority carriers. The logarithm of the capacitance versus photovoltage leads to transitional capacitance.

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Keywords
Parallel vertical junction solar cell – Magnetic field –Doping rate.