Diffusion Coefficient Modeling of a Silicon Solar Cell under Irradiation Effect in Frequency: Electric Equivalent Circuit
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International Journal of Engineering Trends and Technology (IJETT) |  |
| © 2015 by IJETT Journal | ||
| Volume-19 Number-2 |
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| Year of Publication : 2015 | ||
| Authors : Ibrahima TALL, Boureima SEIBOU, Mohamed Abderrahim Ould El Moujtaba , Amadou DIAO, Mamadou WADE, Grégoire SISSOKO |
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| DOI : 10.14445/22315381/IJETT-V19P211 |
Citation
Ibrahima TALL, Boureima SEIBOU, Mohamed Abderrahim Ould El Moujtaba , Amadou DIAO, Mamadou WADE, Grégoire SISSOKO "Diffusion Coefficient Modeling of a Silicon Solar Cell under Irradiation Effect in Frequency: Electric Equivalent Circuit", International Journal of Engineering Trends and Technology (IJETT), V19(2),56-61 Jan 2015. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group
Abstract
In this paper, a theory on the determination of the diffusion coefficient of the excess minority carriers of a silicon solar cell is presented. The expression of the diffusion coefficient, related to the modulation frequency, the irradiation energy and the damage coefficient is studied and then performed by using the impedance spectroscopy method and Bode and Nyquist diagrams. Based on the diffusion coefficient, we deduce the diffusion length, the cutoff frequency and some electrical parameters obtained from the equivalent circuits of the diffusion coefficient.
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Keywords
Diffusion coefficient, irradiation energy, frequency modulation, solar cell.