Design and simulation of FBAR with different electrodes material configuration
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International Journal of Engineering Trends and Technology (IJETT) | 
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| © 2015 by IJETT Journal | ||
| Volume-28 Number-6 |
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| Year of Publication : 2015 | ||
| Authors : Yatin Kumar, Kamaljit Rangra, Ravinder Agarwal |
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| DOI : 10.14445/22315381/IJETT-V28P256 |
Citation
Yatin Kumar, Kamaljit Rangra, Ravinder Agarwal"Design and simulation of FBAR with different electrodes material configuration", International Journal of Engineering Trends and Technology (IJETT), V28(6),294-299 October 2015. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group
Abstract
Thin film bulk acoustic resonator (FBAR) with
high operating frequencies and the higher quality factor are
preferred for many sensing applications. This paper presents
FBAR device geometry for the different electrodes material
optimize for the frequency range of 2.17 GHz to 4.49 GHz
with the thickness of 1 ?m of the Aluminum nitrite (AlN) as a
piezoelectric layer. The effective couplings of range 5.88% to
6.89% have been achieved. The quality factor for the different
electrode materials varies from 360 to 820 for the same
boundary conditions. Aluminum electrodes results in higher
operating frequency as compared to platinum and tungsten.
However, use of Al electrodes leads to lower coupling
coefficient and quality factor as compared to platinum and
tungsten. The equivalent Butterworth Van-Dyke (BVD)
electrical parameters are also extracted. FBAR’s flexibility of
operating frequency, coupling coefficient and quality factor
are achieved by different electrode configuration.
References
[1] R. Ruby, P. Bradley, J. Larson III, Y. Oshmyansky, and D. Figueredo,
in 2001 IEEE International Solid-State Circuits Conference (IEDM)
(IEEE, 2001), p. 120.
[2] K. M. Lakin and J. S. Wang, ?Acoustic bulk wave composite
resonators,Appl. Phys. Lett. 38_3_, 125–127 _1981
[3] Lakin KM, Wang J, Kline G, Landin A, Chen Y, Hunt J, ?Thin film
resonators and filters, Proc IEEE Ultrasonics Symp 1982, 1:466–475
[4] R. C. Ruby, P. Bradley, Y. Oshmyansk, J. D. Chien, and A. Larson,
?Thin film bulk wave acoustic resonators _FBAR_ for wireless
applications, Proc.-IEEE Ultrason. Symp. 1, 813–821 _2001
[5] X. T. Qiu, R. Tang, J. Zhu et al., ?Experiment and theoretical analysis
of relative humidity sensor based on film bulk acoustic-wave
resonator, Sensors and Actuators B, vol. 147, no. 2,pp. 381–384, 2010
[6] X. Qiu, J. Zhu, J. Oiler, C. Yu, Z.Wang, andH. Yu, ?Film bulk acoustic
wave resonator based ultraviolet sensor, Applied Physics Letters, vol.
94, no. 15, Article ID 151917, 2009
[7] M. Nirschl, A. Bl¨uher, C. Erler et al., ?Film bulk acoustic resonators
for DNA and protein detection and investigation of in vitro bacterial Slayer
formation, Sensors and Actuators A, vol. 156, no. 1, pp. 180–
184, 2009
[8] G. Sharma, L. Liljeholm, J. Enlund, J. Bjurstr¨om, I. Katardjiev,and K.
Hjort, ?Fabrication and characterization of a shear mode AlN solidly
mounted resonator-silicone micro-fluidic system for in-liquid sensor
applications, Sensors and Actuators, vol. 159, no. 1, pp. 111–116,
2010
[9] R.-C. Lin, Y.-C. Chen, W.-T. Chang, C.-C. Cheng, and K.S. Kao,
?Highly sensitive mass sensor using film bulk acoustic resonator,
Sensors and Actuators A, vol. 147, no. 2, pp. 425–429, 2008
[10] P. Curie and J. Curie, Bull. Soc. Fr. Mineral. 3, 90 _1880
[11] J. D. Larson III, P. D. Bradley, S. Wartenberg, and R. C. Ruby,
?Modified Butterworth-Van Dyke circuit for FBAR resonators, and
automated measurement system, Proc.-IEEE Ultrason. Symp. 1,863–
868 _2000
[12] J. Y. Park, H. C. Lee, K. H. Lee, H. M. Lee, and Y. J. Ko, ?Micromachined
FBAR RF filters for advanced handset applications, in
IEEE Intl. Conf. Solid State Sensors, Actuators and Microsyst.,
pp.911–914, Boston, MA _June 2003
Keywords
Film Bulk Acoustic Resonator (FBAR), Quality
Factor (Q), Coupling coefficient, CoventorWare, Aluminum
Nitrite, Butterworth Van-Dyke (BVD)