Thermal transient analysis of high power LED tested on Al2O3 thin film coated Al substrate

  IJETT-book-cover  International Journal of Engineering Trends and Technology (IJETT)          
© 2015 by IJETT Journal
Volume-30 Number-6
Year of Publication : 2015
Authors : Shanmugan S, Mutharasu D
DOI :  10.14445/22315381/IJETT-V30P251


Shanmugan S, Mutharasu D"Thermal transient analysis of high power LED tested on Al2O3 thin film coated Al substrate", International Journal of Engineering Trends and Technology (IJETT), V30(6),270-275 December 2015. ISSN:2231-5381. published by seventh sense research group

Aluminium Oxide (Al2O3) thin film was prepared on Al substrates by RF sputtering and used as heat sink material for high power Light Emitting Diode (LED). The thermal transient analysis was performed for the given LED and evaluated the parameters such as total thermal resistance, rise in junction temperature and the thermal resistance of interface material (Al2O3). The Rth-tot value of LED was low for 500 nm Al2O3 thin film boundary condition tested at 150 mA driving current and observed the difference in Rth-tot (?Rth-tot) was high (3.1 K/W) when compared to bare Al boundary condition. Improved reduction in TJ of LED (? TJ = 2.4°C compared with 400 nm Al2O3 boundary condition and ?TJ = 1.9°C compared with bare Al) was achieved with 500 nm boundary condition measured at 350 mA. The surface morphology of Al2O3 thin film was also evidenced for the observation from cooling transient curve as smooth with more no. of contact points.


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LED, Al2O3, thin film, thermal transient analysis and surface properties..