Design of Operational Amplifier in 45nm Technology

Design of Operational Amplifier in 45nm Technology

  IJETT-book-cover  International Journal of Engineering Trends and Technology (IJETT)          
  
© 2016 by IJETT Journal
Volume-36 Number-3
Year of Publication : 2016
Authors : Aman Kaushik, Rajesh Mehra
DOI :  10.14445/22315381/IJETT-V36P224

Citation 

Aman Kaushik, Rajesh Mehra"Design of Operational Amplifier in 45nm Technology", International Journal of Engineering Trends and Technology (IJETT), V36(3),125-129 June 2016. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group

Abstract
This paper presents the designing and performance analysis of Operational Transconductance Amplifier using the 45nm Technology from mosis foundry. This transconductance design is having a biasing current of 5?A with supply voltage of ±1 V. The open loop gain obtained from this design is about 66.5 dB with UGB of 22 MHz is obtained from this design. This OTA design has a CMRR value of 74 dB and PSRR of 70 dB with Power dissipation of 68 ?W and Slew Rate 5 V/?sec. Simulation is done using UMC 45nm technology file.

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Keywords
Cadence, OperationTransconductance Amplifier (OTA), Slew Rate, Power Dissipation, Common mode rejection ratio.