Electrical and Structural Transport characteristics of Ni/Ti Schottky contacts to ntype Indium Phosphide (InP)
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International Journal of Engineering Trends and Technology (IJETT) | 
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| © 2017 by IJETT Journal | ||
| Volume-47 Number-3 |
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| Year of Publication : 2017 | ||
| Authors : Nagaraj M K, Y. Munikrishna Reddy |
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| DOI : 10.14445/22315381/IJETT-V47P230 |
Citation
Nagaraj M K, Y. Munikrishna Reddy "Electrical and Structural Transport characteristics of Ni/Ti Schottky contacts to ntype Indium Phosphide (InP)", International Journal of Engineering Trends and Technology (IJETT), V47(3),183-186 May 2017. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group
Abstract
This article mainly studies about the
current transport mechanism of Ni/Ti bilayer contact
on n-InP Schottky barrier Diode. At ?1 V, the
reverse leakage current of the as-deposited Ni/Ti
Schottky contact is 8.829×10-10A. For contacts
annealed at 200 ?C, 300 ?C and 400 ?C, the reverse
leakage current increases. The corresponding values
are 1.111 X 10-9, 1.329 X 10-9 and 1.649 X 10-9A at -
1 V. The investigated value of SBH of the asdeposited
Ni/Ti Schottky contact is 0.81 eV. On
observation, it is found that there is decrease of SBH
for contacts annealed at 200 ?C and 400 ?C. At the
same time, the relevant values are 0.80 eV, 0.79 eV
and 0.78 eV, respectively. The calculations show
that 0.85 eV is the SBH of as-deposited ni/Ti//n-InP
Schottky diodes. The same are 0.83 eV at 200 ?C
and 0.79 eV at 400 ?C annealed contacts
respectively. It is observed that the as-deposited
Ni/Ti/n-InP contact has the highest SBH as
compared to SBH of annealed contacts. Also, these
values are in good agreement with the values
arrived from the I-V method. The annealing effects
on electrical and structural properties are employed
for this study.
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Keywords
Schottky barrier Diodes; Ni/Ti/n-InP;
I-V Studies; XRD analysis.