Band structure calculation of the semiconductors and their alloys by Tight Binding Model using SciLab

  IJETT-book-cover  International Journal of Engineering Trends and Technology (IJETT)          
  
© 2017 by IJETT Journal
Volume-49 Number-5
Year of Publication : 2017
Authors : Pankaj Kumar, Ayush Kumar
DOI :  10.14445/22315381/IJETT-V49P244

Citation 

Pankaj Kumar, Ayush Kumar "Band structure calculation of the semiconductors and their alloys by Tight Binding Model using SciLab", International Journal of Engineering Trends and Technology (IJETT), V49(5),287-294 July 2017. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group

Abstract
The tight binding model is one of the strong theoretical techniques to calculate the band gap of the materials. The band structures of some semiconductors and the semiconductors made by their combination is calculated here using simulation technique. The basic theory of Tight Binding Model is presented since beginning to the final matrix formulation.

Reference
[1] G.P.Betteridge,“Tight binding central interaction model for the band structure of Silicon”,Aust.J.Phy.vol-37,pp-407-428,1984.
[2] M. D. Stiles, “Generalized Slater-Koster method for fitting band structures,” vol. 55, no. 7, pp. 4168–4173, 1997.
[3] E. Foo, M.F.Thorpe, D.Weaire “Effective surface potential method for calculating surface states,”Surface Science, vol. 57, pp. 323–347, 1976.
[4] Y. Hatsugai, K. Shiraishi, H. Aoki,“Flat bands in Weaire-Thorpe model and silicene.”,New J. Phys. vol-17, 025009,2015
[5] J.F.Nagle, J.C.Bonner,M.F.Thorpe,``Cycle free approximation to amorphous semiconductors.``,Phy.Rev.B,vol-4,pp.2233-2241,1972.
[6] D. J. Chadi and M. L. Cohen, “Tight-Binding Calculations of the Valence Bands of Diamond and Zincblende Crystals,”Phy.Stat.Sol.(b), vol.68, pp. 405–419, 1975.
[7] P.Vogl, H.P.H.Marson, J. D. Dow, “A semiemirical tight binding theory of the electronic structure of semiconductors,” vol. 44, no. 5, pp. 365–378, 1983.
[8] P.Vogl, H.P.H.Marson, J. D. Dow, “A semiemirical tight binding theory of the electronic structure of semiconductors,” vol. 44, no. 5, pp. 365–378, 1983.
[9] R. C. Weast and M. J. Astle, E. (1978). CRC Handbook of Chemistry and Physics.
[10] http://www.ioffe.ru/SVA/NSM/Semicond/GaAs/basic.html.
[11] http://www.ioffe.ru/SVA/NSM/Semicond/GaSb/basic.html. (n.d.).

Keywords
Tight Binding Model(TBM), Aluminium Phosphide(AlP), Aluminium Arsenide(AlAs),Gallium Arsenide(GaAs) and Gallium Antimonide(GaSb).