Realization of MOS-C Sixth Order Band Pass Filter Using FDNR
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International Journal of Engineering Trends and Technology (IJETT) |  |
| © 2018 by IJETT Journal | ||
| Volume-63 Number-2 |
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| Year of Publication : 2018 | ||
| Authors : Kartikesh Gupta, Dr. D. K. Srivastava |
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| DOI : 10.14445/22315381/IJETT-V63P213 |
Citation
MLA Style: Kartikesh Gupta, Dr. D. K. Srivastava"Realization of MOS-C Sixth Order Band Pass Filter Using FDNR" International Journal of Engineering Trends and Technology 63.2 (2018): 77-80.
APA Style:Kartikesh Gupta, Dr. D. K. Srivastava (2018). Realization of MOS-C Sixth Order Band Pass Filter Using FDNR. International Journal of Engineering Trends and Technology, 63(2), 77-80.
Abstract
In this manuscript, the sixth order Band Pass Filter has been modified using FDNR. The FDNR consists of two CCII-, two capacitor and two resistor. The passive resistances are replaced by the MOS-resistor. The circuit is simulated using CMOS 0.18?m technology parameter and result obtained using PSPICE simulation software.
Reference
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Keywords
current conveyor, frequency dependent negative resistance.