Realization of MOS-C Sixth Order Band Pass Filter Using FDNR

  IJETT-book-cover  International Journal of Engineering Trends and Technology (IJETT)          
  
© 2018 by IJETT Journal
Volume-63 Number-2
Year of Publication : 2018
Authors : Kartikesh Gupta, Dr. D. K. Srivastava
DOI :  10.14445/22315381/IJETT-V63P213

Citation 

MLA Style: Kartikesh Gupta, Dr. D. K. Srivastava"Realization of MOS-C Sixth Order Band Pass Filter Using FDNR" International Journal of Engineering Trends and Technology 63.2 (2018): 77-80.

APA Style:Kartikesh Gupta, Dr. D. K. Srivastava (2018). Realization of MOS-C Sixth Order Band Pass Filter Using FDNR. International Journal of Engineering Trends and Technology, 63(2), 77-80.

Abstract
In this manuscript, the sixth order Band Pass Filter has been modified using FDNR. The FDNR consists of two CCII-, two capacitor and two resistor. The passive resistances are replaced by the MOS-resistor. The circuit is simulated using CMOS 0.18?m technology parameter and result obtained using PSPICE simulation software.

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Keywords
current conveyor, frequency dependent negative resistance.