Three-Axis Tunneling Micro accelerometer Based on Self-Organizing Structures
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International Journal of Engineering Trends and Technology (IJETT) | 
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| © 2020 by IJETT Journal | ||
| Volume-68 Issue-11 |
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| Year of Publication : 2020 | ||
| Authors : I.E. Lysenko, M.A. Denisenko, A.S. Isaeva, V.D. Popov |
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| DOI : 10.14445/22315381/IJETT-V68I11P212 |
Citation
MLA Style: I.E. Lysenko, M.A. Denisenko, A.S. Isaeva, V.D. Popov "Three-Axis Tunneling Micro accelerometer Based on Self-Organizing Structures" International Journal of Engineering Trends and Technology 68.11(2020):92-96.
APA Style:I.E. Lysenko, M.A. Denisenko, A.S. Isaeva, V.D. Popov. Three-Axis Tunneling Micro accelerometer Based on Self-Organizing Structures International Journal of Engineering Trends and Technology, 68(11),92-96.
Abstract
The paper presents the design and manufacturing technology of a three-axis integral micromechanical tunnel-type accelerometer. The technological features of the controlled self-organization of mechanically stressed semiconductor GaAs / InAs layers for fabricating MEMS sensor structures are considered. The principle of operation of the tunnel accelerometer is presented. The proposed design was modeled and optimized using ANSYS CAD. The obtained simulation results can be used to develop high-tech precision three-axis MEMS linear acceleration sensors.
Reference
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Keywords
microelectromechanical system, linear acceleration sensor, accelerometer, tunnel effect, MEMS.