Quantitative Impact Assessment of CNTs as the Channel Materials on the Performance of the Proposed Power-Efficient CNTFET-based Operational Transconductance Amplifier Capacitor (OTA-C) for Biomedical Suitability Across Various Technology Nodes
Quantitative Impact Assessment of CNTs as the Channel Materials on the Performance of the Proposed Power-Efficient CNTFET-based Operational Transconductance Amplifier Capacitor (OTA-C) for Biomedical Suitability Across Various Technology Nodes |
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| © 2025 by IJETT Journal | ||
| Volume-73 Issue-7 |
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| Year of Publication : 2025 | ||
| Author : S. Bashiruddin, P. Gupta, M. Nizamuddin | ||
| DOI : 10.14445/22315381/IJETT-V73I7P129 | ||
How to Cite?
S. Bashiruddin, P. Gupta, M. Nizamuddin, "Quantitative Impact Assessment of CNTs as the Channel Materials on the Performance of the Proposed Power-Efficient CNTFET-based Operational Transconductance Amplifier Capacitor (OTA-C) for Biomedical Suitability Across Various Technology Nodes," International Journal of Engineering Trends and Technology, vol. 73, no. 7, pp.369-382, 2025. Crossref, https://doi.org/10.14445/22315381/IJETT-V73I7P129
Abstract
Extremely low-frequency variations are commonly associated with physiological signals. As a result, the signal acquisition system is often affected by various artefacts and noises while acquiring human physiological signals. Therefore, obtaining noise-free physiological signals from the human body using miniaturised, low-power external or implantable devices is crucial for diagnostic and therapeutic applications. The OTA is a flexible component in analogue signal-processing circuits, ideal for low-frequency signal-processing applications. CNTFET-based OTA-C circuits designed for biomedical signal processing were proposed at three technology nodes (14 nm, 22 nm, and 45 nm) and simulated using HSPICE to evaluate their performance. Moreover, the impact of variations in the number of CNTs on performance parameters of the CNTFET-based OTA-Cs was assessed across the 14 nm, 22 nm, and 45 nm technology nodes. The simulation parameters for the CNTFET-based OTA-C were capacitive load/CL = 1 pF, supply voltage of 0.9V, and pitch (S = 20 nm) with varying numbers of CNTs. The maximum gains obtained at CNTs = 20 were 44.429 dB, 38.159 dB, and 25.289 dB at 14 nm, 22 nm, and 45 nm at the technology nodes, respectively. The average power consumption of the CNTFET-OTA-Cs at 14 nm, 22 nm, and 45 nm was recorded to be 13.47µW, 59.09µW, and 68.56µW. The phase margins obtained at CNTs = 20 across technology nodes 14 nm, 22 nm, and 45 nm were 90.336 degrees, 90.697 degrees, and 93.111 degrees, respectively. Additionally, gain increases with an increase in the number of CNTs. However, it stabilised around tube numbers 16-20 across the three technology nodes. The phase margin decreased with the increase in the number of CNTs, which stabilised around tube numbers 15-20 only at technology nodes 14 nm and 22 nm, while at 45 nm, it remained fluctuating around tube numbers 15-20. The simulation results of the performance parameters for this proposed circuit indicated the potential of this OTA circuit as a crucial component for biomedical applications, including wearable and implantable miniature sensors.
Keywords
CNTs, CNTFET, HSPICE, OTA-C, Nanoelectronics.
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