Structural and Optical Properties of Chromium Doped Aluminum Nitride Thin Films Prepared by Stacking of Cr Layer on AlN Thin Film
|International Journal of Engineering Trends and Technology (IJETT)||
|© 2014 by IJETT Journal|
|Year of Publication : 2014|
|Authors : Norazlina M. S. , Shanmugan S. , Mutharasu D
Norazlina M. S. , Shanmugan S. , Mutharasu D. "Structural and Optical Properties of Chromium Doped Aluminum Nitride Thin Films Prepared by Stacking of Cr Layer on AlN Thin Film", International Journal of Engineering Trends and Technology (IJETT), V9(13),667-670 March 2014. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group
Chromium stacked aluminum nitride (Cr-AlN) thin film was deposited on glass substrates by elemental stack method using rf sputtering. Annealing treatment was carried for about 1 hour at 100?C, 300?C, and 500?C in nitrogen atmosphere for doping. Variations of the structural and optical properties of the films were studied using XRD, AFM, FESEM and UV-Vis spectroscopic technique. Structural analysis showed the presence of only (111) planes with very low intensity. From AFM and FESEM images, reduced grain size and smoothened surface morphology was achieved as the annealing temperature increases. Improved optical transmittance of Cr-AlN may be due to the diffusion of Cr into AlN as the annealing temperature increases. Decreased film thickness was also noticed for Cr-AlN thin film with annealing temperatures.
 J. Y. Han, and K. J. Hyeong, “Spectrophotometric Analysis of Aluminum Nitride Thin Films,” Journal of Vacuum Science Technology, vol. 3, pp. 862-870, 1999.
 H. K. Lee, and D. K. Kim, “Effect of second phase after heat treatment on the thermal conductivity of AlN ceramics,” Key Engineer Materials, vol. 403, pp.61-63, 2009.
 K. Jagannadham, A. K. Sharma, Q. Wei, R. Alyanraman, and J. Narayan, “Structural characteristics of AlN films deposited by pulsed laser deposition and reactive magnetron sputtering: A comparative study,” Journal of Vacuum Science Technology, vol. 16, pp.2804-2815, 1998.
 M. H. Park, and S. H. Kim, “Thermal conductivity of AlN thin films deposited by RF magnetron sputtering,” Material science in Semiconductor Processing, vol. 15, pp. 6-10, 2012.
 S. Shanmugan, P. Anithambigai, and D. Mutharasu, “An effect of synthesis parameters on structural properties of AlN thin films deposited on metal substrates,” IJASCSE, vol. 1, pp. 1-10, 2012.
 Y. Xu, D. D. L. Chung, and C. Mroz, “Thermally conducting aluminium nitride polymer-matrix composites,” Composite Part A: Applied Science and Manufacturing, vol. 32, pp. 1749-1757, 2001.
 K. A. Aissa, N. Semmar, D. D. S. Meneses, L. L. Brizoual, M. Gaillard, A. Petit, P. Y. Jouan, C. B. Leborgne, and M. A. Djouadi, “Thermal conductivity measurement of AlN films by fast photothermal method,” Journal of Physics, pp. 1-8, 2012.
 A. T. Wieg, Y. kodera, Z. Wang, T. Imai, C. Dames, and J. E. Garay, “Visible photoluminescence in polycrystalline terbium doped aluminium nitride (Tb:AlN) ceramics with high thermal conductivity,” Applied Physics Letters, pp. 1-5, 2012.
 M. Okamoto, Y. K. Yap, M. Yoshimura, Y. Mori, and T. Sasaki, “Fabrication of conductive AlN films by pulsed laser deposition,” Proc. International Workshop on Nitride Semiconductors, pp. 198-201, 2000.
 L. C. Cossolino, and A. R. Zanatta, “Influence of chromium concentration on the optical-electronic properties of ruby microstructure,” Journal Physics D: Applied Physics, pp. 1-8, 2010.
 Z. Jun, H. L. Sy, and J. S. david, “Epitaxial growth and magnetic properties of Cr-doped AlN thin films,” Journal of Physics: Condensed Matter, vol. 17, pp.3137-3142, 2005.
 H. Cheng, F. Jun, and K. Hong, “Electronic structure and magnetic properties of Cr-Doped AlN,” Communications in Theoretical Physics, vol. 48, pp. 749, 2007.
 E. Yasushi, S. Takanobu, K. Kawamura, and Y. Masahiko, “crystal structure and magnetic properties of Cr-doped AlN films with various Cr concentration,” Material Transaction, vol. 28, pp. 465-470, 2007.
 M. K. M. Ali, K. Ibrahim, E. M. Mkawi, and A. Salhin, “Characterization of phosphoric acid doped N-type silicon thin films printed on ITO coated PET substrate,” International Journal Electrochemical Science, vol. 8, pp. 535-547, 2013.
 L. Vina, and M. Cardona, “Effect of heavy doping on the optical properties and band structure of silicon,” Physical Review B, vol. 29, pp. 6739-6751, June 1984.
 (1996) Doping dependence of the energy band gap website. [Online]. Available: http://ecee.colorado.edu/~bart/book/eband6.htm
 S. Shanmugan, S. Balaji, and K. Ramanathan, “synthesis of ZnTe thin films using stacked elemental layer method: structural studies,” Optoelectronics and Advanced Materials-rapid communications, vol. 3, pp. 468-471, 2009.
 E. Silveira, J. A. Freitas, S. B. Schujman, and L. J. Schwalter, “AlN band gap temperature dependence from its optical properties,” Journal of Crystal Growth, vol. 310, pp. 4007-4010, 2008.
AlN, Structural analysis, Optical Properties.