Influence of the donor doping density in CdS and Zn(O,S) buffer layers on the external quantum efficiency of Cu(In,Ga)Se2 thin film solar cell
Citation
Alain Kassine EHEMBA, Moustapha DIENG, Demba DIALLO, Gerome SAMBOU"Influence of the donor doping density in CdS and Zn(O,S) buffer layers on the external quantum efficiency of Cu(In,Ga)Se2 thin film solar cell", International Journal of Engineering Trends and Technology (IJETT), V28(6),280-286 October 2015. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group
Abstract
In this paper, we study the influence of the
donor doping density of the buffer layer on external
quantum efficiency EQE. We simulate a Cu(In,Ga)Se2
thi film solar cell using the AMPS. We use two types of
buffer layer: the Zn(O,S) and the CdS. These layers
are doped N with various doping densities going from
1015cm-3 to 1020cm-3.The variation of external quantum
efficiency shows us that for the doping densities going
from 1015cm-3 to 1017cm-3, the Zn(O,S) buffer layer
gives more powerful properties than those of the CdS
buffer layer. For the doping densities higher than
1017cm-3, the Zn(O,S) and CdS layers give properties
which make them competing. They present maximum
absorption areas extended on broad wavelength
ranges. We note an EQE which can reach 100% for
the cells with the Zn(O,S) buffer layer and 98.6% for
the cells with the CdS buffer layer. Then the Zn(O, S)
buffer layer gives better quantum efficiency according
to its doping density even if the CdS buffer layer is
more known.
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Keywords
buffer layer, donor density, CdS,
Zn(O,S), Cu(In,Ga)Se2, external quantum efficiency
EQE.