Pragmatic Analysis of CNT Interconnects for Nanometer Regime

  IJETT-book-cover  International Journal of Engineering Trends and Technology (IJETT)          
© 2015 by IJETT Journal
Volume-28 Number-9
Year of Publication : 2015
Authors : Shailendra Mishra, Divya Mishra, R.P. Agarwal
DOI :  10.14445/22315381/IJETT-V28P281


Shailendra Mishra, Divya Mishra, R.P. Agarwal"Pragmatic Analysis of CNT Interconnects for Nanometer Regime", International Journal of Engineering Trends and Technology (IJETT), V28(9),432-435 October 2015. ISSN:2231-5381. published by seventh sense research group

The present age of nanometer has made it inevitable to introduce new conventions to meet the ever growing demand of device scaling and circuit minimising. The continuous improvement in electronic circuitry has been assisted by periodic doubling of transistor densities in ICs over the last few decades. However, as every technology, material has its limitation so does the conventional interconnect materials like Cu and Al. Consequently, newer options are being envisaged to meet the current and future demands. To get acquainted with the emerging technologies that assist the incorporation of interconnect subjected to newer technology nodes and extent of integrated circuit scaling, here I review some of them and present as an idea for future advancements for the same.


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Device scaling, electronmigration, Low-k Dielectrics, porous low-k ILD materials.