Effects of Thermal Annealing on Temperature-Dependent Current-Voltage Characteristics (I-V-T) of the Au/n-InP/In Schottky Diodes

  IJETT-book-cover  International Journal of Engineering Trends and Technology (IJETT)          
© 2018 by IJETT Journal
Volume-55 Number-2
Year of Publication : 2018
Authors : F. E. Cimilli Çat?r
DOI :  10.14445/22315381/IJETT-V55P220


F. E. Cimilli Çat?r "Effects of Thermal Annealing on Temperature-Dependent Current-Voltage Characteristics (I-V-T) of the Au/n-InP/In Schottky Diodes", International Journal of Engineering Trends and Technology (IJETT), V55(2),105-108 January 2018. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group

The Au/n-InP/In Schottky diodes fabricated using n-type InP (100) wafer and the current voltage (I-V) characteristics were calculated according to the sample temperature between 300-70 K with 10K steps after annealing the sample at 400oC in N2 atmosphere for 3 min. The values of the barrier height obtained from I-V measurements for annealed Au/n-InP/In Schottky diodes vary from 0.570, (300 K) to 0.034, (10 K) while the ideality factors vary from 1.008 (300 K) to 3.150 (10 K). The mean barrier height was found to be 0.75 eV and the Richardson constant (A*) values as 0.921 eV and 18.48 Acm-2K-2, respectively. It is observed that the barrier heigth values determined from I-V measurements increased after annealing at 400oC while the ideality factor values decreased. Temperature dependent barrier height values of annealed (at 400oC) Au/n-InP/In Schottky contacts is consistent with ?the barrier inhomogeneous model? of Schottky diodes. Because of accompanying two different mean barrier height values to the schottky diodes for the 70-150 K and 150-300 K temperature ranges, barrier height matches with the double Gaussian model of barrier height.

[1] Ejderha, K., et al., Influence of interface states on the temperature dependence and current-voltage characteristics of Ni/p-InP Schottky diodes. Superlattices and Microstructures, 2010. 47(2): p. 241-252.
[2] Ahmad, Z. and M.H. Sayyad, Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red. Physica E: Low-dimensional Systems and Nanostructures, 2009. 41(4): p. 631-634.
[3] Wang, K. and M. Ye, Parameter determination of Schottky-barrier diode model using differential evolution. Solid-State Electronics, 2009. 53(2): p. 234-240.
[4] Williams, E.H.R.a.R.H., Metal- semiconductor Contacts. 1988, Oxford: Clarendon Press. 20,48.
[5] Robinson, R.H.W.a.G.Y., Physics and Chemistry of III-V Compound Semiconductor Interfaces, ed. C. Wilmsen. 1985, Plenum Press, New York: Springer US. XIII, 465.
[6] Hidayet, C. and A. Enise, Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes. Semiconductor Science and Technology, 2005. 20(6): p. 625.
[7] Cetin, H., E. Ayyildiz, and A. Turut, Barrier height enhancement and stability of the Au/n-InP Schottky barrier diodes oxidized by absorbed water vapor. Journal of Vacuum Science & Technology B, 2005. 23(6): p. 2436-2443.
[8] Meirhaeghe, R.L.V., W.H. Laflere, and F. Cardon, Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts. Journal of Applied Physics, 1994. 76(1): p. 403-406.
[9] Türüt, A., N. Yalçin, and M. Sa?lam, Parameter extraction from non-ideal C?V characteristics of a Schottky diode with and without interfacial layer. Solid-State Electronics, 1992. 35(6): p. 835-841.
[10] Sa?lam, M., et al., Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes. Applied Physics A, 1996. 62(3): p. 269-273.
[11] Mead, C.A. and W.G. Spitzer, Fermi Level Position at Metal-Semiconductor Interfaces. Physical Review, 1964. 134(3A): p. A713-A716.
[12] Newman, N., et al., Electrical study of Schottky barrier heights on atomically clean and air?exposed n?InP(110) surfaces. Applied Physics Letters, 1985. 46(12): p. 1176-1178.
[13] Çak?c?, T., M. Sa?lam, and B. Güzeldir, The effects of thermal annealing on the electrical characteristics of Au/n–InP/In diode. Materials Science in Semiconductor Processing, 2014. 28: p. 121-126.
[14] Cimilli, F.E., et al., Temperature-dependent current–voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height. Physica B: Condensed Matter, 2009. 404(8-11): p. 1558-1562.
[15] Shankar Naik, S. and V. Rajagopal Reddy, Analysis of current–voltage–temperature (I-V-T) and capacitance–voltage–temperature (C-V-T) characteristics of Ni/Au Schottky contacts on n-type InP. Superlattices and Microstructures, 2010. 48(3): p. 330-342.
[16] Cetin, H. and E. Ayyildiz, Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes. Semiconductor Science and Technology, 2005. 20(6): p. 625-631.
[17] Gulnahar, M., Electrical Characteristics of an Ag/n-InP Schottky Diode Based on Temperature-Dependent Current-Voltage and Capacitance-Voltage Measurements. Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science, 2015. [
[18] Soylu, M., B. Abay, and Y. Onganer, The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure. Journal of Physics and Chemistry of Solids, 2010. 71(9): p. 1398-1403.
[19] Reddy, V.R., et al., Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure. Thin Solid Films, 2012. 520(17): p. 5715-5721.
[20] Umapathi, A. and V. Rajagopal Reddy, Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures. Microelectronic Engineering, 2014. 114: p. 31-37.
[21] Sullivan, J.P., et al., Electron transport of inhomogeneous Schottky barriers: A numerical study. Journal of Applied Physics, 1991. 70(12): p. 7403-7424.
[22] Tung, R.T., Recent advances in Schottky barrier concepts. Materials Science and Engineering: R: Reports, 2001. 35(1): p. 1-138.

Schottky barrier diode, barrier inhomogeneity, n-type InP, I-V-T characteristics