Impact of Channel Length Variation on Short Channel Effect Parameters of Two Different GAA Nanowire Transistor Structure
MLA Style: Riaz Uddin Ahmed, Riya Saha,MdMohsinur Rahman Adnan, ShowmikSingha "Impact of Channel Length Variation on Short Channel Effect Parameters of Two Different GAA Nanowire Transistor Structure" International Journal of Engineering Trends and Technology 67.8 (2019):83-86.
APA Style:Riaz Uddin Ahmed, Riya Saha,MdMohsinur Rahman Adnan, ShowmikSingha. Impact of Channel Length Variation on Short Channel Effect Parameters of Two Different GAA Nanowire Transistor Structure International Journal of Engineering Trends and Technology, 67(8),83-86.
Two different structures of junctionless nanowire transistor have been introduced in this work and their performance has been analyzed. Previously proposed two structures: rectangular GAA junctionless nanowire transistor, cylindrical GAA nanowire transistor are analyzed using the CVT model approach by TCAD Silvaco Atlas. Short channel effect parameters like Drain induced barrier lowering (DIBL), Threshold Voltage Roll off (TVRO), Subthreshold Swing (SS), on state and off state current ratio (Ion/Ioff) for the mentioned structures of n-channel JLNW transistor are analyzed. Simulation has been executed by varying channel length (Lg) and oxide thickness (Tox) to observe the electrical transport characteristics. In quintessence, JLRG is better in the threshold voltage roll off parameter over channel length alteration. Although JLCG is better candidate in other SCE parameters like Ion/Ioff ratio, SS and DIBL than JLRG.
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Cylindrical gate structure, rectangular gate structure, CVT, short channel effects, DIBL, Ion/Ioff Ratio, threshold voltage, Silvaco TCAD