Design and Analysis of RF MEMS Switch For High-Frequency Applications
|International Journal of Engineering Trends and Technology (IJETT)||
|© 2020 by IJETT Journal|
|Year of Publication : 2020|
|Authors : Mallikharjuna Rao Sathuluri, G.Sasikala
|DOI : 10.14445/22315381/IJETT-V68I12P218|
MLA Style: Mallikharjuna Rao Sathuluri, G.Sasikala. Design and Analysis of RF MEMS Switch For High-Frequency Applications International Journal of Engineering Trends and Technology 68.12(2020):108-112.
APA Style:Mallikharjuna Rao Sathuluri, G.Sasikala. Design and Analysis of RF MEMS Switch For High-Frequency Applications. International Journal of Engineering Trends and Technology, 68(12), 108-112.
This communication describes the capacitive analysis and design aspects of Radio Frequency (RF) MEMS switch over 1-80 GHz frequency range. Especially capacitive RF MEMS switches are compatible for higherorder frequency applications like 5G taken into consideration. A new verity of MEMS structure is used in the RF MEMS switch design, which helped reduce the pull-in voltage. CPW transmission line is used for the switch design. Two separate bottom electrodes are used to reduce the required actuation voltage. Si3N4 dielectric material and its relative permittivity are 7.8 used. Complete design and simulation are done using FEM tools. The isolation loss is -30 dB, and the insertion loss is -1.22 dB.
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RF MEMS switches, Pull-in voltage, CPW transmission lines, FEM tool.