DBR Laser Design Using Vanadium Doped Silicon-carbide Active Region to Achieve Wide Tuning Range for Telecommunications Application in the 1300nm Window
How to Cite?
Patrick Mumba, Franklin Manene, Stephen Musyoki, "DBR Laser Design Using Vanadium Doped Silicon-carbide Active Region to Achieve Wide Tuning Range for Telecommunications Application in the 1300nm Window" International Journal of Engineering Trends and Technology, vol. 70, no. 3, pp. 162-169, 2022. Crossref, https://doi.org/10.14445/22315381/IJETT-V70I2P218
The 5G technology is expected to use tunable lasers for wavelength selection during optical signal transmission. To accommodate the growing data demand, there is a need to develop lasers with a larger tuning range. In most lasers, Indium gallium arsenide phosphide (InGaAsP), Aluminum Gallium Arsenide (AlGaAs), and Gallium Arsenide (GaAs) have been used for the gain medium due to their direct bandgap and strong optical transitions. However, they have limitations such as low SMSR, low output power due to their narrow bandgap, and a narrow tuning range below 20nm. In this paper, vanadium-doped silicon-carbide was used in the active section of the Distributed Bragg Reflector (DBR) laser to achieve a wide tuning range, high SMSR, low threshold current, and high output power at a low gain current. The fundamental advantages of vanadium-doped silicon-carbide, including fast optical transitions, make its operation in the O-band (1278-1388 nm) possible. The DBR laser architecture design was adopted and designed in Ansys Lumerical. This work established that the use of Vanadium doped silicon-carbide in the active region provides a tuning range of at least 22nm wavelength, a threshold current was found to be 22.5mA with an optical output power of 13mW at the gain current of 120mA, and side mode suppression ratio (SMSR) of at least 45dB.
Distributed Bragg Reflector laser, Vanadium-doped silicon carbide.
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