Impact Analysis of DGMOSFET using Highk Dielectric material

Impact Analysis of DGMOSFET using High-k Dielectric material

  IJETT-book-cover  International Journal of Engineering Trends and Technology (IJETT)          
  
© 2016 by IJETT Journal
Volume-34 Number-4
Year of Publication : 2016
Authors : Rajesh Kumar, Rajesh Mehra
DOI :  10.14445/22315381/IJETT-V34P237

Citation 

Rajesh Kumar, Rajesh Mehra "Impact Analysis of DGMOSFET using High-k Dielectric material", International Journal of Engineering Trends and Technology (IJETT), V34(4),179-183 April 2016. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group

Abstract
Scaling of MOSFET Devices is an important factor in the advancement of Silicon Technology. This paper examines the Performance Evaluation of a DG MOSFET Devices in the presence of High-k dielectric material like HfO2, ZrO2 as compare to conventional bulk SiO2. A New device structure known as DG MOSFET is simulated, discussed and its efficiency in suppressing short channel effects (SCEs) like Threshold voltage, Leakage current(Ioff), Drain induced barrier lowering(DIBL),Sub-threshold-slope(SS) has been analyzed. It is observed that using High-k dielectric material HfO2, ZrO2 there is decrease in leakage current of about 14% in HfO2 and 25% in ZrO2 having LG of 25nm has been observed as compare to conventional Bulk SiO2 material. Also, there is significant decrease in Sub-threshold slope is observed about 46% in HfO2 , 96% in ZrO2 with LG=24nm and 141% in HfO2 ,172% in ZrO2 with LG=12nm as compared to SiO2.

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Keywords
Dielectric, High-k, MOSFET, Scaling, SCEs, Leakage, DIBL, SS.