Memristor Model Based on Generalized Boundary Condition

Memristor Model Based on Generalized Boundary Condition

  IJETT-book-cover  International Journal of Engineering Trends and Technology (IJETT)          
  
© 2017 by IJETT Journal
Volume-49 Number-4
Year of Publication : 2017
Authors : Sourabh Sethi
DOI :  10.14445/22315381/IJETT-V49P231

Citation 

Sourabh Sethi "Memristor Model Based on Generalized Boundary Condition", International Journal of Engineering Trends and Technology (IJETT), V49(4),192-194 July 2017. ISSN:2231-5381. www.ijettjournal.org. published by seventh sense research group

Abstract
Memristor is labelled as a noteworthy applicant for building better storage structure, higher capacity and more efficient performance. Research shows that the density of memristor array could be 100 times compared to DRAM. Postulated by L. Chua in 1971, a memristor(M) is a fourth elementary two terminal component along with Resistor(R), Capacitor(C) and Inductor(L).A memristor displays predictable relationship between its resistance and electrical charge traversing through it. To qualify as a memristor, the response of the dynamical system, corresponding to sinusoidal excitation, must be a hysteresis loop pinched at the origin. In this study a generic physics model based on Generalized Boundary Conditions (GBC) is explained which accommodates highly nonlinear and asymmetric switching behaviour. GBC model combines the variation of state variable (w) and dopant drift memristance (M) definition to adopt the theory of their participation in the memristive behaviour. The generic memristor model can be used for implementation of dense nano crossbar arrays for memory and storage. Computer simulations were completed to verify the model and it verifies L.Chua’s hypothesis. Results show that the proposed approximated model can be well applied.

 References

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Keywords
Memristor, Modelling, Simulation, Linear Ion Drift.