Prototype Design and Analysis of 4-Stage Operational-Amplifier using Double-Gate MOSFET
Prototype Design and Analysis of 4-Stage Operational-Amplifier using Double-Gate MOSFET |
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| © 2023 by IJETT Journal | ||
| Volume-71 Issue-7 |
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| Year of Publication : 2023 | ||
| Author : Joshua T. Ramdeo, Viranjay M. Srivastava |
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| DOI : 10.14445/22315381/IJETT-V71I7P217 | ||
How to Cite?
Joshua T. Ramdeo, Viranjay M. Srivastava, "Prototype Design and Analysis of 4-Stage Operational-Amplifier using Double-Gate MOSFET," International Journal of Engineering Trends and Technology, vol. 71, no. 7, pp. 175-188, 2023. Crossref, https://doi.org/10.14445/22315381/IJETT-V71I7P217
Abstract
This research work designs a 4-stage operational amplifier (op-amp) using Double-Gate (DG) MOSFETs. The DG MOSFET has various advantages over the traditional single-gate MOSFET. These advantages can provide the op-amp with more stability. A feasible solution has been proposed based on the design and analysis. Thereafter, a prototype has been fabricated and realized. The prototype has been tested, and various parameters have been analyzed, such as the output voltage, CMRR, slew rate, voltage losses, etc. The achieved voltage loss is 0.08 V, slew rate of 0.0549 V/µs, which is suitable for nanoelectronics device applications.
Keywords
Double-gate MOSFET, Operational-amplifier, Differential amplifier, Low energy device, Microelectronics, Nanotechnology, VLSI.
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